Data for: "Structure and Density of Silicon Carbide to 1.5 TPa and Implications for Extrasolar Planets"

Kim, Donghoon
Issue date: 28 April 2022
Cite as:
Kim, Donghoon. (2022). Data for: "Structure and Density of Silicon Carbide to 1.5 TPa and Implications for Extrasolar Planets" [Data set]. Princeton University. https://doi.org/10.34770/60th-e253
@electronic{kim_donghoon_2022,
  author      = {Kim, Donghoon},
  title       = {{Data for: "Structure and Density of Sili
                con Carbide to 1.5 TPa and Implications
                for Extrasolar Planets"}},
  publisher   = {{Princeton University}},
  year        = 2022,
  url         = {https://doi.org/10.34770/60th-e253}
}
Abstract:

There has been considerable recent interest in the high-pressure behavior of silicon carbide, a potential major constituent of carbon-rich exoplanets. In this work, the atomic-level structure of SiC was determined through in situ X-ray diffraction under laser-driven ramp compression up to 1.5 TPa; stresses more than seven times greater than previous static and shock data. Here we show that the B1-type structure persists over this stress range and we have constrained its equation of state (EOS). Using this data we have determined the first experimentally based mass-radius curves for a hypothetical pure SiC planet. Interior structure models are constructed for planets consisting of a SiC-rich mantle and iron-rich core. Carbide planets are found to be ~10% less dense than corresponding terrestrial planets.

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